DDR5 Technology Advancement: CXMT's Position Against SK Hynix and Micron Under US Restrictions
DDR5 Technology in Focus
ChangXin Memory Technologies (CXMT), China’s leading producer of dynamic random access memory (DRAM) chips, has advanced its manufacturing technology to 16 nanometres, narrowing the gap with industry giants Samsung Electronics, SK Hynix, and Micron Technology. The Hefei-based company has developed a consumer-grade chip using the advanced chipmaking node, a notable achievement amid ongoing US sanctions, according to a report from Canadian integrated circuits (IC) research firm TechInsights.
Significant Progress in Memory Chips
The new 16-gigabit (Gb) chip employs DDR5 technology, which is expected to dominate the DRAM market through 2027. Measuring about 67 square millimetres, it achieves a storage density of 0.239Gb per square millimetre. CXMT’s latest G4 DRAM technology features memory cells that are 20 per cent smaller than those in its previous G3 technology.
- Significant advancements since its G1 generation node.
- Enhanced production yield from 20 per cent to 80 per cent.
- Market competition with global leaders in DDR5.
Path Ahead Amid Restrictions
However, CXMT still faces equipment import restrictions imposed by the US Department of Commerce aimed at limiting China’s logic chip manufacturing capabilities. Despite this, the company is actively developing next-generation sub-15nm technology and high-bandwidth memory chips for artificial intelligence applications.
This article was prepared using information from open sources in accordance with the principles of Ethical Policy. The editorial team is not responsible for absolute accuracy, as it relies on data from the sources referenced.